BFR90 document number 85028 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 1 1 3 2 e b c 3 1 2 19039 electrostatic sensiti v ede v ice. o b ser v e preca u tions for handling. not for new design, this pr oduct will be obsoleted soon silicon npn planar rf transistor features ? high power gain ? low noise figure ? high transition frequency ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications rf amplifier up to ghz ra nge specially for wide band antenna amplifier. mechanical data case: to-50 plastic case weight: approx. 111 mg marking: BFR90 pinning: 1 = collector, 2 = emitter, 3 = base absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 m cu parameter test condition symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 2v collector current i c 30 ma total power dissipation t amb 60 c p tot 300 mw junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol value unit junction ambient 1) r thja 300 k/w e3
www.vishay.com 2 document number 85028 rev. 1.5, 08-sep-08 BFR90 vishay semiconductors electrical dc characteristics t amb = 25 c, unless otherwise specified electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min ty p. max unit collector-emitter cut-off current v ce = 20 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 20 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 2 v, i c = 0 i ebo 10 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 v dc forward current transfer ratio v ce = 10 v, i c = 14 ma h fe 25 50 150 parameter test condition symbol min ty p. max unit transition frequency v ce = 10 v, i c = 14 ma, f = 500 mhz f t 5ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb 0.35 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce 0.3 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 1.3 pf noise figure v ce = 10 v, i c = 2 ma, f = 500 mhz, z s = 50 f2.2db power gain v ce = 10 v, i c = 14 ma, z l = z lopt , f = 500 mhz g pe 19.5 db v ce = 10 v, i c = 14 ma, z l = z lopt , f = 800 mhz g pe 14 db linear output voltage - two tone intermodulation test v ce = 10 v, i c = 14 ma, d im = 60 db, f 1 = 806 mhz, f 2 = 810 mhz, z s = z l = 50 v 1 = v 2 100 mv third order intercept point v ce = 10 v, i c = 14 ma, f = 800 mhz ip 3 23 dbm
BFR90 document number 85028 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 3 common emitter s-parameters z 0 = 50 , t amb = 25 c, unless otherwise specified v ce /v i c /ma f/mhz s11 s21 s12 s22 lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 5 2 100 0.82 -27.8 6.31 155.8 0.03 73.8 0.95 -10.2 300 0.59 -72.7 4.66 121.6 0.06 54.0 0.80 -22.1 500 0.41 -107.7 3.49 99.9 0.08 46.7 0.70 -27.0 800 0.30 -154.9 2.474 78.0 0.10 44.9 0.63 -32.3 1000 0.29 176.7 2.08 66.9 0.11 46.2 0.60 -36.3 1200 0.30 153.2 1.80 56.4 0.12 47.6 0.57 -40.6 1500 0.35 126.8 1.50 43.1 0.15 48.9 0.54 -47.6 1800 0.41 108.7 1.32 31.2 0.18 49.2 0.50 -55.5 2000 0.45 99.1 1.22 24.4 0.20 48.0 0.48 -61.1 5 5 100 0.65 -39.9 12.44 145.2 0.02 70.3 0.88 -16.2 300 0.35 -91.8 7.26 108.3 0.05 58.7 0.65 -25.4 500 0.22 -130.4 4.85 90.2 0.07 58.5 0.57 -26.9 800 0.16 177.4 3.22 72.6 0.10 58.2 0.52 -30.6 1000 0.18 150.9 2.66 63.4 0.12 57.3 0.50 -34.5 1200 0.21 131.6 2.28 54.4 0.14 55.5 0.47 -38.6 1500 0.27 112.7 1.89 42.8 0.18 51.9 0.44 -45.2 1800 0.33 100.1 1.65 31.8 0.21 48.2 0.40 -52.1 2000 0.37 92.8 1.53 25.2 0.24 45.0 0.38 -56.9 5 10 100 0.45 -54.6 18.55 133.7 0.02 70.4 0.79 -21.5 300 0.19 -112.5 8.73 99.4 0.04 66.6 0.55 -24.7 500 0.12 -156.4 5.54 84.5 0.07 66.8 0.49 -24.9 800 0.12 148.7 3.60 69.5 0.11 64.0 0.46 -28.7 1000 0.15 129.3 2.96 61.3 0.13 61.4 0.44 -32.8 1200 0.18 117.0 2.51 53.0 0.16 58.0 0.42 -37.1 1500 0.24 104.4 2.08 42.1 0.19 52.8 0.38 -43.5 1800 0.30 94.9 1.82 31.8 0.23 47.7 0.35 -49.9 2000 0.34 89.5 1.67 25.4 0.25 43.7 0.32 -54.5 5 14 100 0.35 -62.6 20.95 128.4 0.02 71.4 0.73 -23.2 300 0.14 -124.4 9.11 96.3 0.04 70.1 0.51 -23.7 500 0.10 -173.0 5.71 82.7 0.07 69.3 0.47 -23.7 800 0.12 138.3 3.70 68.2 0.11 65.5 0.44 -27.7 1000 0.15 123.3 3.03 60.4 0.13 62.5 0.42 -32.1 1200 0.18 113.2 2.58 52.3 0.16 58.7 0.40 -36.5 1500 0.24 101.6 2.13 41.7 0.20 52.8 0.36 -42.9 1800 0.30 93.2 1.85 31.4 0.23 47.4 0.33 -49.2 2000 0.33 88.4 1.72 25.0 0.26 43.3 0.30 -53.6 5 20 100 0.26 -71.1 22.95 123.4 0.01 72.4 0.68 -23.9 300 0.11 -140.3 9.39 93.8 0.04 73.2 0.49 -22.0 500 0.09 169.9 5.84 81.1 0.07 71.5 0.46 -22.0 800 0.13 131.1 3.75 67.3 0.11 66.9 0.43 -26.7 1000 0.15 117.8 3.07 59.7 0.14 63.3 0.42 -31.0 1200 0.18 109.5 2.62 51.7 0.16 59.3 0.39 -35.4 1500 0.24 99.5 2.16 41.1 0.20 53.3 0.36 -41.8 1800 0.30 93.1 1.87 30.9 0.24 47.7 0.32 -48.1 2000 0.33 87.9 1.73 24.8 0.26 43.4 0.30 -52.4
www.vishay.com 4 document number 85028 rev. 1.5, 08-sep-08 BFR90 vishay semiconductors 10 2 100 0.84 -25.7 6.21 157.1 0.02 74.8 0.96 -8.3 300 0.61 -68.0 4.69 123.8 0.05 56.2 0.84 -18.4 500 0.42 -101.2 3.57 102.1 0.07 49.3 0.75 -22.7 800 0.28 -147.9 2.53 80.4 0.08 48.1 0.69 -27.8 1000 0.26 -177.6 2.14 69.5 0.09 50.0 0.67 -31.6 1200 0.27 156.2 1.84 59.0 0.11 51.9 0.65 -35.6 1500 0.32 127.9 1.54 46.0 0.13 54.1 0.62 -41.9 1800 0.39 109.1 1.34 34.2 0.15 55.0 0.59 -48.8 2000 0.43 98.7 1.24 27.3 0.18 54.2 0.57 -53.8 10 5 100 0.67 -36.6 12.62 146.6 0.02 71.9 0.91 -13.0 300 0.36 -83.1 7.54 110.1 0.04 60.7 0.72 -20.7 500 0.21 -116.9 5.07 91.8 0.06 60.6 0.65 -22.2 800 0.13 -173.7 3.37 74.5 0.08 61.0 0.61 -26.3 1000 0.14 153.1 2.78 65.5 0.10 60.5 0.59 -29.8 1200 0.17 130.1 2.37 56.7 0.12 59.0 0.57 -33.6 1500 0.23 110.4 1.97 45.3 0.15 56.1 0.54 -39.7 1800 0.29 97.7 1.71 34.6 0.18 53.1 0.51 -45.7 2000 0.33 91.2 1.58 28.0 0.20 50.3 0.49 -50.0 10 10 100 0.49 -47.6 18.87 135.7 0.02 71.4 0.83 -16.8 300 0.19 -93.8 9.12 101.1 0.04 68.0 0.63 -19.6 500 0.09 -133.4 5.82 86.1 0.06 68.4 0.58 -20.2 800 0.07 151.2 3.77 71.2 0.09 66.5 0.56 -24.4 1000 0.10 124.5 3.09 63.3 0.11 64.3 0.54 -28.2 1200 0.14 109.4 2.63 55.2 0.13 61.4 0.52 -32.2 1500 0.19 98.6 2.17 44.7 0.16 56.9 0.49 -38.0 1800 0.26 90.8 1.89 34.6 0.20 52.4 0.46 -44.1 2000 0.29 86.0 1.75 28.3 0.22 48.9 0.44 -48.0 10 14 100 0.39 -53.4 21.53 130.3 0.01 72.2 0.79 -17.8 300 0.13 -98.6 9.58 97.8 0.04 71.0 0.60 -18.5 500 0.06 -146.3 6.02 84.0 0.06 70.7 0.57 -19.2 800 0.07 131.1 3.89 70.0 0.09 67.8 0.55 -23.7 1000 0.10 113.4 3.18 62.4 0.11 65.3 0.53 -27.4 1200 0.13 103.2 2.70 54.7 0.14 62.0 0.51 -31.5 1500 0.19 94.2 2.23 44.3 0.17 57.0 0.48 -37.4 1800 0.24 89.1 1.93 34.2 0.20 52.3 0.45 -43.3 2000 0.29 85.3 1.79 28.13 0.22 48.6 0.43 -47.3 v ce /v i c /ma f/mhz s11 s21 s12 s22 lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg
BFR90 document number 85028 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. total power dissipat ion vs. ambient temperature figure 2. transiti on frequency vs. collector current figure 3. collector base capacit ance vs. collector base voltage (c) (m w ) 0 1000 2000 3000 4000 5000 6000 0 8 16 24 32 40 i c C collector current ( ma ) 12886 f C transition frequency ( mhz ) t v ce =10v f = 500 mhz 0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 v cb C collector base voltag e(v) 12887 c C collector base capacitance ( pf ) cb f=1mhz figure 4. noise figure vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 i c C collector current ( ma ) 12888 f C noise figure ( db ) v ce =10v f = 800 mhz z s =50
www.vishay.com 6 document number 85028 rev. 1.5, 08-sep-08 BFR90 vishay semiconductors v ce = 10 v, i c = 14 ma, z 0 = 50 s 11 s 12 s 21 s 22 figure 5. input reflection coefficient figure 6. reverse transmission coefficient 13506 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j2 j5 0.2 0.5 1 2 5 2.0 ghz 0.1 0.3 0.8 13507 0 90 180 C90 0.2 0.4 C150 C120 C60 C30 120 150 60 30 2.0 ghz 1.0 0.1 figure 7. forward trans mission coefficient figure 8. output reflection coefficient 13508 0 90 180 C90 20 40 C150 C120 C60 C30 120 150 60 30 2.0 ghz 0.1 0.3 13509 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 2.0 ghz 0.1 0.5
BFR90 document number 85028 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 7 package dimensions in mm 96 12244
www.vishay.com 8 document number 85028 rev. 1.5, 08-sep-08 BFR90 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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